document number: 94099 for technical questions, contact: diodestech@vishay.com www.vishay.com revision: 17-sep-09 1 fast soft recovery rectifier diode, 20 a 20etf..spbf soft recovery series vishay high power products features/description the 20etf..spbf fast so ft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. the glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. this product series has been designed and qualified for industrial level. compliant to rohs directive 2002/95/ec. halogen-free according to iec 61249-2-21 definition. applications ? output rectification and freewheeling in inverters, choppers and converters ? input rectifications where se vere restrictions on conducted emi should be met product summary v f at 20 a < 1.31 v i fsm 355 a v rrm 800 v to 1200 v d 2 pak (smd-220) base common cathode + 3 anode 2 1 anode -- major ratings and characteristics symbol characteristics values units i f(av) sinusoidal waveform 20 a v rrm 800 to 1200 v i fsm 355 a v f 20 a, t j = 25 c 1.31 v t rr 1 a, 100 a/s 95 ns t j range - 40 to 150 c voltage ratings part number v rrm , maximum peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm at 150 c ma 20etf08spbf 800 900 6 20etf10spbf 1000 1100 20etf12spbf 1200 1300 absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) t c = 97 c, 180 conduction half sine wave 20 a maximum peak one cycle non-repetitive surge current i fsm 10 ms sine pulse, rated v rrm applied 300 10 ms sine pulse, no voltage reapplied 355 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 450 a 2 s 10 ms sine pulse, no voltage reapplied 635 maximum i 2 t for fusing i 2 t t = 0.1 ms to 10 ms, no voltage reapplied 6350 a 2 s * pb containing terminations are not rohs compliant, exemptions may apply
www.vishay.com for technical questions, contact: diodestech@vishay.com document number: 94099 2 revision: 17-sep-09 20etf..spbf soft recovery series vishay high power products fast soft recovery rectifier diode, 20 a note (1) when mounted on 1" square (650 mm 2 ) pcb of fr-4 or g-10 materi al 4 oz. (140 m) copper 40 c/w for recommended footprint and soldering techniques refer to application note #an-994 electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm 20 a, t j = 25 c 1.31 v forward slope resistance r t t j = 150 c 11.88 m threshold voltage v f(to) 0.93 v maximum reverse leakage current i rm t j = 25 c v r = rated v rrm 0.1 ma t j = 150 c 6 recovery characteristics parameter symbol test conditions values units reverse recovery time t rr i f at 20 apk 25 a/s 25 c 400 ns reverse recovery current i rr 6.1 a reverse recovery charge q rr 1.7 c snap factor s typical 0.6 i fm t rr dir dt i rm(rec) q rr t t a t b thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 40 to 150 c maximum thermal resistance, junction to case r thjc dc operation 0.9 c/w maximum thermal resistance, junction to ambient (pcb mount) r thja (1) 62 soldering temperature t s 240 c approximate weight 2g 0.07 oz. marking device case style d 2 pak (smd-220) 20etf08s 20etf10s 20etf12s
document number: 94099 for technical questions, contact: diodestech@vishay.com www.vishay.com revision: 17-sep-09 3 20etf..spbf soft recovery series fast soft recovery rectifier diode, 20 a vishay high power products fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - forward power loss characteristics fig. 4 - forward powe r loss characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current 150 0 maximum allowable case temperature (c) average forward current (a) 5 100 10 25 120 130 110 15 20 140 cond u ction angle 20etf.. series r thjc (dc) = 0.9 k/ w 30 60 90 120 1 8 0 ? 150 025 maximum allowable case temperature (c) average forward current (a) 15 530 110 35 120 100 10 20 130 140 20etf.. series r thjc (dc) = 0.9 k/ w ? cond u ction period 30 60 90 120 1 8 0 dc 10 0 35 0 maximum average forward power loss (w) average forward current (a) 20 25 25 30 20 10 15 5 5 15 cond u ction angle 20etf.. series t j = 150 c rms limit 1 8 0 120 90 60 30 ? 10 0 45 0 maximum average forward power loss (w) average forward current (a) 25 35 15 10 25 5 15 5 20 35 20 30 40 30 rms limit ? cond u ction period 20etf.. series t j = 150 c 1 8 0 120 90 60 30 dc 350 50 1 10 100 peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) 200 100 150 250 at any rated load condition and w ith rated v rrm applied follo w ing s u rge. initial t j = 150 c at 60 hz 0.00 8 3 s at 50 hz 0.0100 s 20etf.. series 300 150 50 0.01 0.1 1 peak half sine wave forward current (a) pulse train duration (s) 300 100 200 250 350 400 20etf.. series maxim u m non-repetiti v e s u rge c u rrent v ers u s p u lse train d u ration. initial t j = 150 c n o v oltage reapplied rated v rrm reapplied
www.vishay.com for technical questions, contact: diodestech@vishay.com document number: 94099 4 revision: 17-sep-09 20etf..spbf soft recovery series vishay high power products fast soft recovery rectifier diode, 20 a fig. 7 - forward voltage drop characteristics fig. 8 - recovery time characteristics, t j = 25 c fig. 9 - recovery time characteristics, t j = 150 c fig. 10 - recovery charge characteristics, t j = 25 c fig. 11 - recovery charge characteristics, t j = 150 c 1000 10 1 0 1.0 2.0 instantaneous forward current (a) instantaneous forward voltage (v) 100 3.0 4.0 t j = 25 c t j = 150 c 20etf.. series 0.5 1.5 2.5 3.5 0.7 0.6 0 0 50 100 150 200 t rr - maximum reverse recovery time (s) di/dt - rate of fall of forward current (a/s) 0.2 0.4 20etf.. series t j = 25 c i fm = 10 a i fm = 5 a i fm = 1 a i fm = 30 a i fm = 20 a 0.1 0.3 0.5 1.2 0 0 50 100 150 200 t rr - maximum reverse recovery time (s) di/dt - rate of fall of forward current (a/s) 0.6 0.9 0.3 20etf.. series t j = 150 c i fm = 30 a i fm = 1 a i fm = 20 a i fm = 10 a i fm = 5 a 6 0 0 50 100 150 200 q rr - maximum reverse recovery charge (c) di/dt - rate of fall of forward current (a/s) 3 1 2 4 5 20etf.. series t j = 25 c i fm = 30 a i fm = 20 a i fm = 10 a i fm = 5 a i fm = 1 a 0 0 50 100 150 200 q rr - maximum reverse recovery charge (c) di/dt - rate of fall of forward current (a/s) 2 4 20etf.. series t j = 150 c 6 8 10 i fm = 30 a i fm = 20 a i fm = 10 a i fm = 5 a i fm = 1 a
document number: 94099 for technical questions, contact: diodestech@vishay.com www.vishay.com revision: 17-sep-09 5 20etf..spbf soft recovery series fast soft recovery rectifier diode, 20 a vishay high power products fig. 12 - recovery current characteristics, t j = 25 c fig. 13 - recovery current characteristics, t j = 150 c fig. 14 - thermal impedance z thjc characteristics 25 0 0 50 100 150 200 i rr - maximum reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 5 15 10 20 20etf.. series t j = 25 c i fm = 30 a i fm = 20 a i fm = 10 a i fm = 5 a i fm = 1 a 35 20 0 0 50 100 150 200 i rr - maximum reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 5 10 30 20etf.. series t j = 150 c 15 25 i fm = 30 a i fm = 20 a i fm = 10 a i fm = 5 a i fm = 1 a 0.01 1 1 0.0001 0.001 0.01 0.1 square wave pulse duration (s) z thjc - transient thermal impedance (k/w) 0.1 single p u lse 20etf.. series steady state v al u e (dc operation) d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.0 8
www.vishay.com for technical questions, contact: diodestech@vishay.com document number: 94099 6 revision: 17-sep-09 20etf..spbf soft recovery series vishay high power products fast soft recovery rectifier diode, 20 a ordering information table 1 - current rating (20 = 20 a) 2 - circuit configuration: e = single diode 3 - package: t = d 2 pak (to-220ac) 4 - type of silicon: f = fast soft recovery rectifier 5 - voltage code x 100 = v rrm 6 - s = surface mountable 7 - none = tape trr = tape and reel (right oriented) trl = tape and reel (left oriented) 8 - none = standard production pbf = lead (pb)-free 08 = 800 v 10 = 1000 v 12 = 1200 v device code 5 13 24 678 20 e t f 12 s trl pbf links to related documents dimensions www.vishay.com/doc?95046 part marking information www.vishay.com/doc?95054 packaging information www.vishay.com/doc?95032
document number: 95046 for technical questions within your region, please contact one of the following: www.vishay.com revision: 31-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 d 2 pak outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and toleranc ing per asme y14.5 m-1994 (2) dimension d and e do not include mold flash. mold flash sh all not exceed 0.127 mm (0.005") per side. these dimens ions are measu red at the outmost extremes of the plastic body (3) thermal pad contour optional with in dimension e, l1, d1 and e1 (4) dimension b1 and c1 a pply to base metal only (5) datum a and b to be determined at datum plane h (6) controlling dimension: inch (7) outline conforms to jedec outline to-263ab symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.06 4.83 0.160 0.190 d1 6.86 8.00 0.270 0.315 3 a1 0.00 0.254 0.000 0.010 e 9.65 10.67 0.380 0.420 2, 3 b 0.51 0.99 0.020 0.039 e1 7.90 8.80 0.311 0.346 3 b1 0.51 0.89 0.020 0.035 4 e 2.54 bsc 0.100 bsc b2 1.14 1.78 0.045 0.070 h 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 4 l 1.78 2.79 0.070 0.110 c 0.38 0.74 0.015 0.029 l1 - 1.65 - 0.066 3 c1 0.38 0.58 0.015 0.023 4 l2 1.27 1.78 0.050 0.070 c2 1.14 1.65 0.045 0.065 l3 0.25 bsc 0.010 bsc d 8.51 9.65 0.335 0.380 2 l4 4.78 5.28 0.188 0.208 c b detail a c2 a a a 0.004 b m a lead tip (3) (3) view a - a (e) (d1) e1 b h a1 detail ?a? rotated 90 cw scale: 8 :1 l gauge plane 0 to 8 l3 l4 seating plane section b - b and c - c scale: none (4) (4) ( b , b 2) b 1, b 3 (c) c1 base metal plating conforms to jedec outline d 2 pak (smd-220) 13 2 d c a l2 e (2)(3) (2) 4 h bb 2 x b 2 x b 2 l1 0.010 a b mm (3) e 2 x pad layout min. 11.00 (0.43) min. 9.65 (0.3 8 ) min. 3. 8 1 (0.15) min. 2.32 (0.0 8 ) 17.90 (0.70) 15.00 (0.625) 2.64 (0.103) 2.41 (0.096) lead assignments diodes 1. - anode (two die)/open (one die) 2., 4. - cathode 3. - anode
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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